? 2008 ixys corporation, all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces 200 a v ge = 0v t j = 125 c 2 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 100a, v ge = 15v, note 1 1.35 1.50 v i c = 200a 1.65 v t j = 125 c 1.75 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 150 a i c110 t c = 110 c (chip capability) 90 a i cm t c = 25 c, 1ms 600 a ssoa v ge = 15v, t vj = 125 c, r g = 1 i cm = 300 a (rbsoa) clamped inductive load @ v ce 600v p c t c = 25 c 400 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c v isol 50/60hz, rms, 1 minute 2500 v~ i isol 1ma t = 1s 3000 v~ f c mounting force 20..120/4.5..27 n/lb. weight 8 g ds99917b(05/08) IXGL200N60B3 g = gate c = collector e = emitter gccee v ces = 600v i c110 = 90a v ce(sat) 1.50v t fi(typ) = 183ns genx3 tm 600v igbt medium speed low vsat pt igbts 5-40 khz switching features z silocon chip on direct-copper bond (dcb) substrate z isolated mounting surface z square rbsoa z high current handling capability z 2500v electrical isolation advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts
ixys reserves the right to change limits, test conditions, and dimensions. IXGL200N60B3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 95 160 s c ies 26 nf c oes v ce = 25v, v ge = 0v, f = 1mhz 1260 pf c res 97 pf q g 750 nc q ge i c = 100a, v ge = 15v, v ce = 0.5 ? v ces 115 nc q gc 245 nc t d(on) 44 ns t ri 83 ns e on 1.6 mj t d(off) 310 450 ns t fi 183 300 ns e off 2.9 4.5 mj t d(on) 42 ns t ri 80 ns e on 2.4 mj t d(off) 430 ns t fi 300 ns e off 4.2 mj r thjc 0.31 c/w r thcs 0.11 c/w inductive load, t j = 25 c i c = 100a, v ge = 15v v ce = 300v, r g = 1 inductive load, t j = 125 c i c = 100a, v ge = 15v v ce = 300v, r g = 1 note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note: bottom heatsink meets 2,500vrms isolation to the other pins.
? 2008 ixys corporation, all rights reserved IXGL200N60B3 fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v ce - volts i c - amperes v ge = 15v 11v 9v 7v 5v 6v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 0123456789 v ce - volts i c - amperes v ge = 15v 11v 9v 5v 6v 7v fig. 3. output characteristics @ 125oc 0 20 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v ce - volts i c - amperes v ge = 15 v 13 v 11 v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 200a i c = 150a i c = 100a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 200 a 150 a 100 a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGL200N60B3 fig. 11. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 25 50 75 100 125 150 175 200 225 250 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 50 100 150 200 250 300 350 100 200 300 400 500 600 v ce - volts i c - amperes t j = 125oc r g = 1 dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 600 700 800 q g - nanocoulombs v ge - volts v ce = 300v i c = 100a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res ixys ref: g_200n60b3(97)3-28-08-a
? 2008 ixys corporation, all rights reserved IXGL200N60B3 fig. 12. inductive switching energy loss vs. gate resistance 1.5 2.0 2.5 3.0 3.5 4.0 4.5 12345678910 r g - ohms e off - millijoules 0.5 1.0 1.5 2.0 2.5 3.0 3.5 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 300v i c = 100a i c = 50a fig. 17. inductive turn-off switching times vs. junction temperature 120 140 160 180 200 220 240 260 280 300 320 340 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 280 300 320 340 360 380 400 420 440 460 480 500 t d(off) - nanoseconds t f t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 300v i c = 50a, 100a fig. 15. inductive turn-off switching times vs. gate resistance 230 240 250 260 270 280 290 300 310 320 330 12345678910 r g - ohms t f - nanoseconds 300 400 500 600 700 800 900 1000 1100 1200 1300 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 300v i c = 100a i c = 50a fig. 13. inductive switching energy loss vs. collector current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 50 55 60 65 70 75 80 85 90 95 100 i c - amperes e off - millijoules 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 e on - millijoules e off e on - - - - r g = 1 ? , v ge = 15v v ce = 300v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 e on - millijoules e off e on - - - - r g = 1 ? , v ge = 15v v ce = 300v i c = 100a i c = 50a fig. 16. inductive turn-off switching times vs. collector current 120 140 160 180 200 220 240 260 280 300 320 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t f - nanoseconds 300 320 340 360 380 400 420 440 460 480 500 t d(off) - nanoseconds t f t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 300v t j = 125oc t j = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGL200N60B3 ixys ref: g_200n60b3(97)3-28-08-a fig. 19. inductive turn-on switching times vs. collector current 30 40 50 60 70 80 90 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t r - nanoseconds 36 38 40 42 44 46 48 t d(on) - nanoseconds t r t d(on) - - - - r g = 1 ? , v ge = 15v v ce = 300v t j = 25oc, 125oc fig. 20. inductive turn-on switching times vs. junction temperature 30 40 50 60 70 80 90 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 36 38 40 42 44 46 48 t d(on) - nanoseconds t r t d(on) - - - - r g = 1 ? , v ge = 15v v ce = 300v i c = 50a i c = 100a fig. 18. inductive turn-on switching times vs. gate resistance 30 50 70 90 110 130 150 12345678910 r g - ohms t r - nanoseconds 20 40 60 80 100 120 140 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 300v i c = 100a i c = 50a
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